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| US1A-US1M Vishay Lite-On Power Semiconductor 1.0A Surface Mount Ultra-Fast Rectifier Features D D D D Glass passivated die construction Diffused junction Ultra-fast recovery time for high efficiency Low forward voltage drop, high current capability, and low power loss D Surge overload rating to 30A peak D Ideally suited for automated assembly D Plastic material - UL Recognition flammability classification 94V-0 14 415 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage DC Blocking lt =DC Bl ki voltage Test Conditions Type US1A US1B US1D US1G US1J US1K US1M TT=75C Symbol VRRM =VRWM V =VR Value 50 100 200 400 600 800 1000 30 1 -65...+150 Unit V V V V V V V A A C Peak forward surge current Average forward current Junction and storage temperature range IFSM IFAV Tj=Tstg Electrical Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=1A Type Symbol Min Typ Max Unit US1A-US1D VF 1.0 V US1G VF 1.3 V US1J-US1M VF 1.7 V IR 5.0 mA IR 100 mA US1A-US1G trr 50 ns US1J-US1M trr 75 ns US1A-US1G CD 20 pF US1J-US1M CD 10 pF RthJT 75 K/W TA=25C TA=100C Reverse recovery time IF=1A, IR=0.5A, Irr=0.25A y Diode capacitance Thermal resistance junction to terminal VR=4V, f=1MHz on PC board with 5.0mm2 Reverse current Rev. A2, 24-Jun-98 1 (4) US1A-US1M Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified) IFSM - Peak Forward Surge Current ( A ) IFAV - Average Forward Current ( A ) 40 Single Half Sine-Wave (JEDEC Method) 1.0 30 20 0.5 10 Tj = 150C 0 25 15393 0 1 10 Number of Cycles at 60 Hz 100 50 75 100 125 150 15395 Tamb - Ambient Temperature ( C ) Figure 1. Max. Average Forward Current vs. Ambient Temperature 10 IF - Forward Current ( A ) Tj = 25C IF Pulse Width = 300 s US1A-US1D Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 1000 US1G IR - Reverse Current ( m A ) 100 Tj = 100C 1.0 US1J-US1J 10 1.0 Tj = 25C 0.1 0.1 0.01 0.01 0 15394 0.4 0.8 1.2 1.6 2.0 15396 VF - Forward Voltage ( V ) 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 4. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage 2 (4) Rev. A2, 24-Jun-98 US1A-US1M Vishay Lite-On Power Semiconductor Dimensions in mm 14458 Case: molded plastic Polarity: cathode band or cathode notch Approx. weight: 0.064 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) US1A-US1M Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98 |
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